VS4805DS mosfet equivalent, dual p-channel advanced power mosfet.
BVDSS (typ.)=-30V
Ron(typ.)=18 mΩ @VGS=-10V Ron(typ.)=28 mΩ @VGS=-4.5V
Low On-Resistance
Fast Switching
Lead-Free, Hg-Free,Rohs Compliant
VS4805DS
-30V/-8A Dual P-.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
.
Description
VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable devic.
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